{"id":2422,"date":"2018-07-12T01:54:22","date_gmt":"2018-07-12T01:54:22","guid":{"rendered":"https:\/\/hocvienit.vn\/?p=2422"},"modified":"2024-07-03T17:03:29","modified_gmt":"2024-07-03T10:03:29","slug":"dien-dan-truyen-cua-e-mosfet","status":"publish","type":"post","link":"https:\/\/hocvienit.vn\/?p=2422","title":{"rendered":"\u0110i\u1ec7n d\u1eabn truy\u1ec1n c\u1ee7a E – mosfet"},"content":{"rendered":"

E- mosfet \u0111\u00e3 tr\u1edf n\u00ean c\u1ef1c k\u1ef3 quan tr\u1ecdng trong \u0111i\u1ec7n t\u1eed k\u1ef9 thu\u1eadt s\u1ed1. H\u00e3y c\u00f9ng t\u00ecm hi\u1ec3u \u0111i\u1ec7n d\u1eabn truy\u1ec1n c\u1ee7a E-mosfet qua b\u00e0i vi\u1ebft sau:<\/p>\n

1. X\u00e2y d\u1ef1ng m\u1ed9t E – mosfet<\/h2>\n

S\u1ef1 kh\u00e1c bi\u1ec7t ch\u00ednh gi\u1eefa vi\u1ec7c x\u00e2y d\u1ef1ng De-mosfet v\u00e0 E-mosfet, nh\u01b0 ch\u00fang ta th\u1ea5y t\u1eeb c\u00e1c s\u1ed1 li\u1ec7u \u0111\u01b0\u1ee3c \u0111\u01b0a ra b\u00ean d\u01b0\u1edbi ch\u1ea5t n\u1ec1n E – mosfet k\u00e9o d\u00e0i \u0111\u1ebfn t\u1eadn silicon dioxide (SiO 2 ) v\u00e0 kh\u00f4ng c\u00f3 k\u00eanh n\u00e0o \u0111\u01b0\u1ee3c pha t\u1ea1p gi\u1eefa ngu\u1ed3n v\u00e0 c\u1ed1ng. C\u00e1c k\u00eanh \u0111\u01b0\u1ee3c t\u1ea1o ra b\u1eb1ng \u0111i\u1ec7n trong c\u00e1c mosfet n\u00e0y, khi \u0111i\u1ec7n \u00e1p ngu\u1ed3n c\u1ed5ng V GS d\u01b0\u01a1ng \u0111\u01b0\u1ee3c \u0111\u1eb7t v\u00e0o n\u00f3.<\/p>\n

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2. Ho\u1ea1t \u0111\u1ed9ng c\u1ee7a E- mosfet:<\/h2>\n

Mosfet n\u00e0y ch\u1ec9 ho\u1ea1t \u0111\u1ed9ng \u1edf ch\u1ebf \u0111\u1ed9 t\u0103ng c\u01b0\u1eddng v\u00e0 kh\u00f4ng c\u00f3 ch\u1ebf \u0111\u1ed9 c\u1ea1n ki\u1ec7t. N\u00f3 ho\u1ea1t \u0111\u1ed9ng v\u1edbi \u0111i\u1ec7n \u00e1p c\u1ed5ng d\u01b0\u01a1ng l\u1edbn. N\u00f3 kh\u00f4ng ti\u1ebfn h\u00e0nh khi \u0111i\u1ec7n \u00e1p ngu\u1ed3n c\u1ed5ng V GS = 0. \u0110\u00e2y l\u00e0 l\u00fd do m\u00e0 n\u00f3 \u0111\u01b0\u1ee3c g\u1ecdi l\u00e0 mosfet t\u1eaft th\u00f4ng th\u01b0\u1eddng. Trong c\u00e1c d\u00f2ng mosfet n\u00e0y, d\u00f2ng I D ch\u1ec9 ch\u1ea3y khi V GS v\u01b0\u1ee3t qu\u00e1 V GST [ \u0111i\u1ec7n \u00e1p ng\u01b0\u1ee1ng c\u1eeda ngu\u1ed3n ].<\/p>\n

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Khi c\u1ed1ng \u0111\u01b0\u1ee3c \u0111\u1eb7t v\u1edbi \u0111i\u1ec7n \u00e1p d\u01b0\u01a1ng li\u00ean quan \u0111\u1ebfn ngu\u1ed3n v\u00e0 kh\u00f4ng c\u00f3 ti\u1ec1m n\u0103ng n\u00e0o \u0111\u01b0\u1ee3c \u0111\u1eb7t v\u00e0o c\u1ed5ng hai v\u00f9ng N v\u00e0 m\u1ed9t \u0111\u1ebf P t\u1eeb hai \u0111i\u1ec3m n\u1ed1i PN \u0111\u01b0\u1ee3c n\u1ed1i ng\u01b0\u1ee3c tr\u1edf l\u1ea1i v\u1edbi \u0111i\u1ec7n tr\u1edf c\u1ee7a \u0111\u1ebf P. V\u00ec v\u1eady, m\u1ed9t d\u00f2ng ch\u1ea3y r\u1ea5t nh\u1ecf \u0111\u00f3 l\u00e0, d\u00f2ng ch\u1ea3y r\u00f2 ng\u01b0\u1ee3c. N\u1ebfu ch\u1ea5t n\u1ec1n lo\u1ea1i P b\u00e2y gi\u1edd \u0111\u01b0\u1ee3c k\u1ebft n\u1ed1i v\u1edbi thi\u1ebft b\u1ecb \u0111\u1ea7u cu\u1ed1i ngu\u1ed3n, th\u00ec c\u00f3 \u0111i\u1ec7n \u00e1p b\u1eb1ng 0 tr\u00ean \u0111\u01b0\u1eddng giao nhau c\u1ee7a ch\u1ea5t n\u1ec1n ngu\u1ed3n v\u00e0 \u0111\u01b0\u1eddng n\u1ed1i – \u0111\u1ebf tho\u00e1t n\u01b0\u1edbc v\u1eabn b\u1ecb ph\u00e2n c\u1ef1c ng\u01b0\u1ee3c.<\/p>\n

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Khi c\u1ed5ng \u0111\u01b0\u1ee3c l\u00e0m d\u01b0\u01a1ng \u0111\u1ed1i v\u1edbi ngu\u1ed3n v\u00e0 ch\u1ea5t n\u1ec1n, c\u00e1c h\u1ea1t mang \u0111i\u1ec7n t\u00edch \u00e2m (ngh\u0129a l\u00e0 thi\u1ec3u s\u1ed1) trong \u0111\u1ebf \u0111\u01b0\u1ee3c thu h\u00fat v\u00e0o c\u1ed5ng d\u01b0\u01a1ng v\u00e0 t\u00edch t\u1ee5 g\u1ea7n b\u1ec1 m\u1eb7t c\u1ee7a \u0111\u1ebf. Khi \u0111i\u1ec7n \u00e1p c\u1ed5ng t\u0103ng l\u00ean, ng\u00e0y c\u00e0ng nhi\u1ec1u electron t\u00edch t\u1ee5 d\u01b0\u1edbi c\u1ed5ng. V\u00ec c\u00e1c electron n\u00e0y kh\u00f4ng th\u1ec3 ch\u1ea3y qua l\u1edbp silicon dioxide c\u00e1ch \u0111i\u1ec7n \u0111\u1ebfn c\u1ed5ng, v\u00ec v\u1eady ch\u00fang t\u00edch t\u1ee5 \u1edf b\u1ec1 m\u1eb7t c\u1ee7a ch\u1ea5t n\u1ec1n ngay d\u01b0\u1edbi c\u1ed5ng. C\u00e1c k\u00eanh mang \u0111i\u1ec7n t\u00edch thi\u1ec3u s\u1ed1 t\u00edch l\u0169y n\u00e0y k\u00eanh N -type tr\u1ea3i d\u00e0i t\u1eeb c\u1ed1ng \u0111\u1ebfn ngu\u1ed3n. Khi \u0111i\u1ec1u n\u00e0y x\u1ea3y ra, m\u1ed9t k\u00eanh \u0111\u01b0\u1ee3c t\u1ea1o ra b\u1eb1ng c\u00e1ch h\u00ecnh th\u00e0nh c\u00e1i \u0111\u01b0\u1ee3c g\u1ecdi l\u00e0 l\u1edbp \u0111\u1ea3o ng\u01b0\u1ee3c(Lo\u1ea1i N). B\u00e2y gi\u1edd m\u1ed9t d\u00f2ng ch\u1ea3y b\u1eaft \u0111\u1ea7u ch\u1ea3y. C\u01b0\u1eddng \u0111\u1ed9 c\u1ee7a d\u00f2ng tho\u00e1t ph\u1ee5 thu\u1ed9c v\u00e0o \u0111i\u1ec7n tr\u1edf k\u00eanh, do \u0111\u00f3, ph\u1ee5 thu\u1ed9c v\u00e0o s\u1ed1 l\u01b0\u1ee3ng s\u00f3ng mang \u0111i\u1ec7n t\u00edch \u0111\u01b0\u1ee3c thu h\u00fat v\u00e0o c\u1ed5ng d\u01b0\u01a1ng. Do \u0111\u00f3, c\u1ed1ng hi\u1ec7n t\u1ea1i \u0111\u01b0\u1ee3c ki\u1ec3m so\u00e1t b\u1edfi ti\u1ec1m n\u0103ng c\u1ed5ng.<\/p>\n

Do \u0111\u1ed9 d\u1eabn c\u1ee7a k\u00eanh \u0111\u01b0\u1ee3c t\u0103ng c\u01b0\u1eddng b\u1edfi \u0111\u1ed9 l\u1ec7ch d\u01b0\u01a1ng tr\u00ean c\u1ed5ng n\u00ean thi\u1ebft b\u1ecb n\u00e0y c\u00f2n \u0111\u01b0\u1ee3c g\u1ecdi l\u00e0 MOSFET c\u1ea3i ti\u1ebfn ho\u1eb7c E – mosfet.<\/p>\n

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Gi\u00e1 tr\u1ecb t\u1ed1i thi\u1ec3u c\u1ee7a c\u1eeda-to-ngu\u1ed3n \u0111i\u1ec7n \u00e1p V GS \u0111\u00f3 l\u00e0 c\u1ea7n thi\u1ebft \u0111\u1ec3 t\u1ea1o th\u00e0nh l\u1edbp \u0111\u1ea3o ng\u01b0\u1ee3c (N-type) \u0111\u01b0\u1ee3c g\u1ecdi l\u00e0 c\u1ed5ng-to-ngu\u1ed3n \u0111i\u1ec7n \u00e1p ng\u01b0\u1ee1ng V GST . \u0110\u1ed1i v\u1edbi V GS d\u01b0\u1edbi V GST , d\u00f2ng x\u1ea3 I D = 0. Nh\u01b0ng \u0111\u1ed1i v\u1edbi V GS v\u01b0\u1ee3t qu\u00e1 V GST, l\u1edbp \u0111\u1ea3o ng\u01b0\u1ee3c lo\u1ea1i N k\u1ebft n\u1ed1i ngu\u1ed3n \u0111\u1ec3 tho\u00e1t v\u00e0 d\u00f2ng tho\u00e1t I D l\u1edbn. T\u00f9y thu\u1ed9c v\u00e0o thi\u1ebft b\u1ecb \u0111ang \u0111\u01b0\u1ee3c s\u1eed d\u1ee5ng, V GST c\u00f3 th\u1ec3 thay \u0111\u1ed5i t\u1eeb d\u01b0\u1edbi 1 V \u0111\u1ebfn h\u01a1n 5 V.<\/p>\n

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3. \u0110\u1eb7c \u0111i\u1ec3m c\u1ee7a E – mosfet.<\/h2>\n

C\u00e1c \u0111\u1eb7c t\u00ednh tho\u00e1t n\u01b0\u1edbc c\u1ee7a E-mosfet k\u00eanh N \u0111\u01b0\u1ee3c th\u1ec3 hi\u1ec7n trong h\u00ecnh. \u0110\u01b0\u1eddng cong th\u1ea5p nh\u1ea5t l\u00e0 \u0111\u01b0\u1eddng cong V GST . Khi V GS nh\u1ecf h\u01a1n V GST , I D x\u1ea5p x\u1ec9 b\u1eb1ng kh\u00f4ng. Khi V GS l\u1edbn h\u01a1n V GST , thi\u1ebft b\u1ecb s\u1ebd b\u1eadt v\u00e0 d\u00f2ng x\u1ea3 I D \u0111\u01b0\u1ee3c \u0111i\u1ec1u khi\u1ec3n b\u1edfi \u0111i\u1ec7n \u00e1p c\u1ed5ng. C\u00e1c \u0111\u01b0\u1eddng cong \u0111\u1eb7c tr\u01b0ng c\u00f3 c\u00e1c ph\u1ea7n g\u1ea7n nh\u01b0 d\u1ecdc v\u00e0 g\u1ea7n nh\u01b0 ngang. C\u00e1c th\u00e0nh ph\u1ea7n g\u1ea7n nh\u01b0 th\u1eb3ng \u0111\u1ee9ng c\u1ee7a c\u00e1c \u0111\u01b0\u1eddng cong t\u01b0\u01a1ng \u1ee9ng v\u1edbi v\u00f9ng ohmic v\u00e0 c\u00e1c th\u00e0nh ph\u1ea7n n\u1eb1m ngang t\u01b0\u01a1ng \u1ee9ng v\u1edbi v\u00f9ng hi\u1ec7n t\u1ea1i kh\u00f4ng \u0111\u1ed5i. Do \u0111\u00f3, E-MOSFET c\u00f3 th\u1ec3 \u0111\u01b0\u1ee3c v\u1eadn h\u00e0nh \u1edf m\u1ed9t trong hai khu v\u1ef1c n\u00e0y, t\u1ee9c l\u00e0n\u00f3 c\u00f3 th\u1ec3 \u0111\u01b0\u1ee3c s\u1eed d\u1ee5ng nh\u01b0 m\u1ed9t \u0111i\u1ec7n tr\u1edf bi\u1ebfn \u0111i\u1ec7n \u00e1p (WR) ho\u1eb7c nh\u01b0 m\u1ed9t ngu\u1ed3n d\u00f2ng kh\u00f4ng \u0111\u1ed5i.<\/p>\n

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H\u00ecnh cho th\u1ea5y m\u1ed9t \u0111\u01b0\u1eddng cong xuy\u00ean d\u1eabn \u0111i\u1ec3n h\u00ecnh. IDSS hi\u1ec7n t\u1ea1i \u1edf VGS <= 0 l\u00e0 r\u1ea5t nh\u1ecf, theo th\u1ee9 t\u1ef1 c\u1ee7a m\u1ed9t v\u00e0i ampe nano. Khi V GS \u0111\u01b0\u1ee3c l\u00e0m cho d\u01b0\u01a1ng, d\u00f2ng tho\u00e1t I D ban \u0111\u1ea7u t\u0103ng ch\u1eadm, v\u00e0 sau \u0111\u00f3 nhanh h\u01a1n nhi\u1ec1u v\u1edbi s\u1ef1 gia t\u0103ng c\u1ee7a V GS . Nh\u00e0 s\u1ea3n xu\u1ea5t \u0111\u00f4i khi ch\u1ec9 ra \u0111i\u1ec7n \u00e1p ng\u01b0\u1ee1ng ngu\u1ed3n c\u1ed5ng V GST m\u00e0 t\u1ea1i \u0111\u00f3 d\u00f2ng x\u1ea3 I D \u0111\u1ea1t \u0111\u01b0\u1ee3c m\u1ed9t s\u1ed1 gi\u00e1 tr\u1ecb nh\u1ecf x\u00e1c \u0111\u1ecbnh, gi\u1ea3 s\u1eed 10 u A. D\u00f2ng I D (0N , t\u01b0\u01a1ng \u1ee9ng v\u1edbi gi\u00e1 tr\u1ecb t\u1ed1i \u0111a \u0111\u01b0\u1ee3c \u0111\u01b0a ra cho c\u00e1c \u0111\u1eb7c t\u00ednh c\u1ed1ng v\u00e0 c\u00e1c gi\u00e1 tr\u1ecb c\u1ee7a V GS c\u1ea7n thi\u1ebft \u0111\u1ec3 cung c\u1ea5p cho V Gs QN hi\u1ec7n t\u1ea1i n\u00e0y c\u0169ng th\u01b0\u1eddng \u0111\u01b0\u1ee3c \u0111\u01b0a ra tr\u00ean b\u1ea3ng d\u1eef li\u1ec7u c\u1ee7a nh\u00e0 s\u1ea3n xu\u1ea5t.<\/p>\n

4. Bi\u1ec3u t\u01b0\u1ee3ng s\u01a1 \u0111\u1ed3 c\u1ee7a EMOSFE.<\/h2>\n

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C\u00e1c k\u00fd hi\u1ec7u s\u01a1 \u0111\u1ed3 cho E-mosfet k\u00eanh N \u0111\u01b0\u1ee3c hi\u1ec3n th\u1ecb trong h\u00ecnh. \u0110\u1ed1i v\u1edbi gi\u00e1 tr\u1ecb 0 c\u1ee7a V GS , E – mosfet b\u1ecb T\u1eaeT v\u00ec kh\u00f4ng c\u00f3 k\u00eanh d\u1eabn gi\u1eefa ngu\u1ed3n v\u00e0 c\u1ed1ng. M\u1ed7i bi\u1ec3u t\u01b0\u1ee3ng s\u01a1 \u0111\u1ed3 hi\u1ec3n th\u1ecb trong h\u00ecnh, c\u00f3 d\u00f2ng k\u00eanh b\u1ecb h\u1ecfng \u0111\u1ec3 bi\u1ec3u th\u1ecb \u0111i\u1ec1u ki\u1ec7n T\u1eaeT th\u00f4ng th\u01b0\u1eddng n\u00e0y. Nh\u01b0 ch\u00fang ta bi\u1ebft r\u1eb1ng \u0111\u1ed1i v\u1edbi V GS v\u01b0\u1ee3t qu\u00e1 ng\u01b0\u1ee1ng \u0111i\u1ec7n \u00e1p V GST, m\u1ed9t l\u1edbp \u0111\u1ea3o ng\u01b0\u1ee3c lo\u1ea1i N, k\u1ebft n\u1ed1i ngu\u1ed3n \u0111\u1ec3 tho\u00e1t, \u0111\u01b0\u1ee3c t\u1ea1o. Trong m\u1ed7i k\u00fd hi\u1ec7u s\u01a1 \u0111\u1ed3, m\u0169i t\u00ean ch\u1ec9 v\u00e0o l\u1edbp \u0111\u1ea3o ng\u01b0\u1ee3c n\u00e0y, ho\u1ea1t \u0111\u1ed9ng gi\u1ed1ng nh\u01b0 m\u1ed9t k\u00eanh N khi thi\u1ebft b\u1ecb \u0111ang ti\u1ebfn h\u00e0nh. Trong m\u1ed7i tr\u01b0\u1eddng h\u1ee3p, th\u1ef1c t\u1ebf l\u00e0 thi\u1ebft b\u1ecb c\u00f3 c\u1ed5ng c\u00e1ch \u0111i\u1ec7n \u0111\u01b0\u1ee3c ch\u1ec9 \u0111\u1ecbnh b\u1edfi c\u1ed5ng kh\u00f4ng ti\u1ebfp x\u00fac tr\u1ef1c ti\u1ebfp v\u1edbi k\u00eanh. Bi\u1ec3u t\u01b0\u1ee3ng s\u01a1 \u0111\u1ed3 hi\u1ec3n th\u1ecb trong h\u00ecnh cho th\u1ea5y ngu\u1ed3n v\u00e0 ch\u1ea5t n\u1ec1n \u0111\u01b0\u1ee3c k\u1ebft n\u1ed1i b\u00ean trong, trong khi bi\u1ec3u t\u01b0\u1ee3ng kh\u00e1c trong h\u00ecnh cho th\u1ea5y k\u1ebft n\u1ed1i c\u01a1 ch\u1ea5t \u0111\u01b0\u1ee3c t\u00e1ch ra kh\u1ecfi ngu\u1ed3n.<\/p>\n

5. C\u00f4ng th\u1ee9c \u0111i\u1ec7n d\u1eabn truy\u1ec1n c\u1ee7a E – mosfet<\/h2>\n

C\u00e1c k\u00fd hi\u1ec7u s\u01a1 \u0111\u1ed3 cho E – mosfet k\u00eanh P c\u0169ng \u0111\u01b0\u1ee3c hi\u1ec3n th\u1ecb. Trong nh\u1eefng tr\u01b0\u1eddng h\u1ee3p n\u00e0y, m\u0169i t\u00ean ch\u1ec9 ra ngo\u00e0i.<\/p>\n

Do c\u00f4ng th\u1ee9c t\u00ednh d\u00f2ng \u0111i\u1ec7n tho\u00e1t ID<\/span>\u00a0theo VGS<\/span>\u00a0c\u1ee7a E – mosfet kh\u00e1c v\u1edbi JFET v\u00e0 De- mosfet n\u00ean \u0111i\u1ec7n d\u1eabn truy\u1ec1n c\u1ee7a n\u00f3 c\u0169ng kh\u00e1c.<\/span><\/p>\n

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\n<\/span><\/p>\n

Trong \u0111\u00f3:<\/span><\/p>\n

gm<\/span>: l\u00e0 \u0111i\u1ec7n d\u1eabn truy\u1ec1n c\u1ee7a E – mosfet cho t\u00edn hi\u1ec7u nh\u1ecf.<\/span><\/p>\n

K: l\u00e0 h\u1eb1ng s\u1ed1 v\u1edbi \u0111\u01a1n v\u1ecb Amp\/volt2.<\/span><\/span><\/p>\n

ID<\/span>: D\u00f2ng di\u1ec7n ph\u00e2n c\u1ef1c c\u1ef1c tho\u00e1t D.<\/span><\/p>\n

Ta th\u1ea5y gm<\/span>\u00a0t\u00f9y thu\u1ed9c v\u00e0o d\u00f2ng \u0111i\u1ec7n tho\u00e1t ID<\/span>, n\u1ebfu g\u1ecdi gm1<\/span>\u00a0l\u00e0 \u0111i\u1ec7n d\u1eabn truy\u1ec1n c\u1ee7a E – mosfet \u1ee9ng v\u1edbi d\u00f2ng tho\u00e1t ID1<\/span>\u00a0v\u00e0 gm2<\/span>\u00a0l\u00e0 \u0111i\u1ec7n d\u1eabn truy\u1ec1n c\u1ee7a E – mosfet \u1ee9ng v\u1edbi d\u00f2ng tho\u00e1t ID2.<\/span><\/span><\/p>\n

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\u00a0<\/span><\/span>M\u1ecdi chi ti\u1ebft xin vui l\u00f2ng li\u00ean h\u1ec7:<\/i><\/p>\n

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